Appropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. The 75 contributions are divided into eight sections on epitaxial growth techniques, SiGe heterojunction bipolar tr.
类比积体电路分析与设计: 第三版
Silicon Germanium Heterojunction Bipolar Transistors: Large-signal Modeling and Low-frequency Noise Characterization Aspects
1. Operational amplifiers and applications -- 1.1 Basic amplifier characteristics -- 1.2 Modeling the OpAmp -- 1.3 Basic applications of the OpAmp -- 1.3.1 Inverting amplifier -- 1.3.2 Summing amplifier -- 1.3.3 Non-inverting amplifier -- 1 ...
This text provides a comprehensive introduction to electricity and electronics for students at school or college and other institutions of education and training.