SiC Materials and Devices

  • SiC Materials and Devices
    SiC Materials and Devices
    By Michael Shur, Sergey L. Rumyantsev, Mikhail Efimovich Levinshtein

    239-242 [120] K. Masahara, T. Takahashi, M. Kushibe, T. Ohno, J. Nishio, K. Kojima, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai. Materials Science Forum V. 389-393 (2002) pp. 227-230 [121] M. Hasegawa, A. Miyauchi, ...

  • SiC Materials and Devices
    SiC Materials and Devices
    By Michael Shur, Sergey L. Rumyantsev, Mikhail Efimovich Levinshte?n

    ... on non-equivalent lattice sites (see section 5.1) have different ionization energies caused by the Kohn-Luttinger effect. ... the real-space distribution of the electronic charge density n(r) differs considerably from that of a ...

  • SiC Materials and Devices
    SiC Materials and Devices
    By Michael Shur, Sergey L. Rumyantsev, M. E. Levinshtei?n

    17 H. S. Kong, J. T. Glass, and R.F. Davis, “Chemical vapor deposition and characterization of 6HSiC thin films on off-axis 6H-SiC substrates”, J. Appl. Phys., vol. 64, pp. 2672-2679, 1988. ... 24 Si W, Dudley M, Glass R, et al.

  • SiC Materials and Devices
    SiC Materials and Devices

    ... Active Layer Formation by Ion Implantation H. Hasimoto, Focused Ion Beam Implantation Technology T. Nozaki and A. ... Suprlattices Volume 33 Strained-Layer Superlattices: Materials Science and Technology R. Hull and J. C. Bean, ...

  • Sic Materials and Devices: Volume 2
    Sic Materials and Devices: Volume 2

    Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization ...