Cleaning Technology in Semiconductor Device Manufacturing ...: Proceedings of the International Symposium

Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
By Takeshi Hattori
... cleaning times between 1-4 min at high megasonic power led to substantial increase in the k - value . However , a bake ... 10-100 W between 2 and 3 min , in which 10 W / 2 min represents the mildest condition . Subsequent plasma etch of ...
Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
By Jerzy Rużyłło
... surface states on metallic removal efficiency , wafers were contaminated by dipping in dilute HF solutions which had ... conditioning in 10 ppb Cu containing 50 : 1 dilute HF solutions for 30 min were measured by a TXRF technique . For ...
Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
By Jerzy Rużyłło, Richard E. Novak
... surface can also have an effect on the density of surface charge . For instance , the surface charge measurements on the surface of chemically cleaned silicon have shown that surface charge varies significantly depending on the cleaning ...