This issue covers topics related to the removal of contaminants from and conditioning of Si (SOI), SiC, Ge, SiGe, and III-V semiconductor surfaces; cleaning media, including non-aqueous cleaning methods and tools; front- and back-end cleaning operations; integrated cleaning; cleaning of MEMS; photomasks (reticles); porous low-k dielectrics; post-CMP cleaning; wafer bevel cleaning and polishing; characterization, evaluation, and monitoring of cleaning; correlation with device performance as well as cleaning of equipment and storage and handling hardware. The hardcover edition includes a bonus CD-ROM of Cleaning Technology in Semiconductor Device Manufacturing 1989?2007: Proceedings from the ECS Semiconductor Cleaning Symposia 1?10. This bonus material is not available with the PDF edition.
... cleaning times between 1-4 min at high megasonic power led to substantial increase in the k - value . However , a bake ... 10-100 W between 2 and 3 min , in which 10 W / 2 min represents the mildest condition . Subsequent plasma etch of ...
... Control for Semiconductor Manufacturing, M. Dekker Inc., New York, NY, 1990, pp. 225e261. Chapter 15. T. Ohmi, H ... Contamination Control in Microelectronics, Noyes Publications, Park Ridge, NJ, 1988. Chapter 11. J. Davidson, C. Hsu, E ...
Engineers working for semiconductor manufacturing, capital equipment, chemicals, or other industries that assures cleanliness of chemicals, material, and equipment in the manufacturing area will also find this handbook an indispensible ...
... Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing”, but its scope and overall objectives remain the same. This issue of ECS Transactions, just like its predecessors, includes a collection of papers ...
Cleaning Technology in Semiconductor Device Manufacturing ...: Proceedings of the International Symposium
effects of ion beams on the optical properties of dielectric materials that can be used to fabricate optical waveguides and other related photonic devices. A large span of possibilities exists, depending on ion type and energy.
In this series Rajiv Kohli and Kash Mittal have brought together the work of experts from different industry sectors and backgrounds to provide a state-of-the-art survey and best-practice guidance for scientists and engineers engaged in ...
... cleaning , and surface conditioning , ” in Handbook of Silicon Wafer Cleaning Technology , 2nd edn . , eds . K. A. Reinhardt and W. Kern , Elsevier , pp . 355-427 , 2008 . [ 17 ] J. S. Song , Y. C. Choi , S. H. Seo , et al . , “ Wet ...
... surface states on metallic removal efficiency , wafers were contaminated by dipping in dilute HF solutions which had ... conditioning in 10 ppb Cu containing 50 : 1 dilute HF solutions for 30 min were measured by a TXRF technique . For ...
... surface can also have an effect on the density of surface charge . For instance , the surface charge measurements on the surface of chemically cleaned silicon have shown that surface charge varies significantly depending on the cleaning ...